# Power MOSFET, P Channel, 30 V, 5.3 A, 0.038 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:1864596RL/)

**URL**: https://novapart.co/products/TSM3481CX6%20RFG/power-mosfet-p-channel-30-v-53-a-0038-ohm-sot-26
**SKU**: TSM3481CX6 RFG
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3540
**Stock**: 1000+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.3A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1864596RL/)

**TSM3481CX6** 

Taiwan Semiconductor 

## **P-Channel Power MOSFET** 

## FEATURES 

- Advance trench process technology 

- High density cell design for ultra-low on-resistance 

- RoHS compliant 

- Halogen-free 

## APPLICATIONS 

|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||-30|V|
|RDS(on)(max)|VGS= -10V|48|mΩ|
||VGS= -4.5V|79||
|Qg||24|nC|



- Power management 

- Load switch 

## **SOT-26** 

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage||VDS|-30|V|
|Gate-Source Voltage||VGS|±20|V|
|Continuous Drain Current|TA= 25°C|ID|-4.6|A|
|Pulsed Drain Current**(Note 1)**||IDM|-18.4|A|
|Total Power Dissipation|TA= 25°C|PD|1.56|W|
||TA= 70°C||1||
|OperatingJunction and Storage Temperature Range||TJ,TSTG|- 55 to +150|°C|



|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Junction to Ambient Thermal Resistance**(Note 2)**|RӨJA|80|°C/W|



**Notes:** 

1. Pulse Width ≤ 100µs. 

2. Device on a PCB FR4 with 1 in[2] (single layer, 2 oz thickness) copper area for drain connection. 

1 Version: E2406 

**TSM3481CX6** 

Taiwan Semiconductor 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|MIN|TYP|MAX|UNIT|
|**Static (Note 3)**|||||||
|Drain-Source Breakdown Voltage|VGS= 0V, ID= -250µA|BVDSS|-30|--|--|V|
|Gate Threshold Voltage|VDS= VGS, ID= -250µA|VGS(TH)|-1|-1.5|-3|V|
|Gate Body Leakage<br>~~—~~|VGS= ±20V, VDS= 0V<br>~~ee~~|IGSS<br>~~ee~~|--<br>~~ee~~|--<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~—~~|VDS= -24V, VGS= 0V<br>~~ee~~|IDSS<br>~~ee~~|--<br>~~ee~~|--<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|
|Drain-Source On-State Resistance<br>~~—~~|VGS= -10V, ID= -4.6A<br>~~ee~~|RDS(on)<br>~~ee~~|--<br>~~ee~~|15<br>~~ee~~|48<br>~~ee~~|mΩ<br>~~ee~~|
||VGS= -4.5V, ID= -3.6A<br>~~ee~~||--<br>~~ee~~|21<br>~~ee~~|79<br>~~ee~~||
|Forward Transconductance<br>~~— ~~<br>~~——~~|VDS= -10V, ID= -1.2A<br> ~~ee~~<br>~~EE~~|gfs<br>~~ee~~<br>~~EE~~|--<br>~~ee~~<br>~~EE~~|7<br>~~ee~~<br>~~EE~~|--<br>~~ee~~<br>~~EE~~|S<br>~~ee~~<br>~~EE~~|
|**Dynamic (Note 4)**<br>~~——~~<br>~~EE~~|||||||
|Total Gate Charge<br>~~——~~|VDS= -15V, ID= -4.6A,<br>VGS= -10V<br>~~EE~~|Qg<br>~~EE~~|--<br>~~EE~~|24<br>~~EE~~|--<br>~~EE~~|nC<br>~~EE~~|
|Gate-Source Charge<br>~~——~~||Qgs<br>~~EE~~|--<br>~~EE~~|3.3<br>~~EE~~|--<br>~~EE~~||
|Gate-Drain Charge<br>~~——~~||Qgd<br>~~EE~~|--<br>~~EE~~|5.2<br>~~EE~~|--<br>~~EE~~||
|Input Capacitance<br>~~——~~<br>~~————~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~EE~~<br>~~————~~|Ciss<br>~~EE~~<br>~~————~~|--<br>~~EE~~<br>~~————~~|1077<br>~~EE~~<br>~~————~~|--<br>~~EE~~<br>~~————~~|pF<br>~~EE~~<br>~~————~~|
|Output Capacitance<br>~~——~~<br>~~————~~||Coss<br>~~EE~~<br>~~————~~|--<br>~~EE~~<br>~~————~~|188<br>~~EE~~<br>~~————~~|--<br>~~EE~~<br>~~————~~||
|Reverse Transfer Capacitance<br>~~————~~||Crss<br>~~————~~|--<br>~~————~~|29<br>~~————~~|--<br>~~————~~||
|**Switching (Note 5)**<br>~~————~~<br>~~———~~<br>~~=== 2~~|||||||
|Turn-On Delay Time<br>~~———~~|VDD= -15V, RG= 6Ω,<br>ID= -4.6A, VGS= -10V<br>~~===~~|td(on)<br>~~===~~|--<br>~~===~~|5.6<br>~~===~~|--<br>~~=== 2~~|ns<br>~~2~~|
|Turn-On Rise Time<br>~~———~~||tr<br>~~===~~|--<br>~~===~~|2.3<br>~~===~~|--<br>~~=== 2~~||
|Turn-Off Delay Time<br>~~———~~||td(off)<br>~~===~~|--<br>~~===~~|95<br>~~===~~|--<br>~~=== 2~~||
|Turn-Off Fall Time<br>~~———~~||tf<br>~~===~~|--<br>~~===~~|48<br>~~===~~|--<br>~~=== 2~~||
|**Source-Drain Diode**<br>~~———~~<br>~~=== 2~~|||||||
|Forward Voltage**(Note 3)**|IS= -4.6A, VGS= 0V|VSD|--|0.8|1.2|V|



**Notes:** 

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

4. Defined by design. Not subject to production test. 

5. Switching time is essentially independent of operating temperature. 

## ORDERING INFORMATION 

|ORDERING CODE<br>~~[_~~|PACKAGE|PACKING|
|---|---|---|
|TSM3481CX6 RFG<br>~~[_~~|SOT-26|3kpcs / 7” Reel|



2 Version: E2406 

**TSM3481CX6** Taiwan Semiconductor 

- $5 a Taiwan Semiconductor **TSM3481CX6** 

CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 

**Output Characteristics** 

**Transfer Characteristics** 

**==> picture [266 x 617] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>25<br>Y/_b<br>VGS=-3.5 to -10V<br>20 WA<br>15 |<br>VGS=-3V<br>10<br>VGS=-2.5V<br>5 p<br>0<br>0 1 2 3 4 5<br>-VDS, Drain to Source Voltage (V)<br>On-Resistance vs. Drain Current<br>100<br>80 tity<br>Ey<br>60 tity<br>Ey<br>VGS=-10V<br>40<br>Poorer<br>20 VGS=-4.5V<br>0 PEEP<br>2 4 6 8 10 12 14 16 18 20<br>-ID, Drain Current (A)<br>On-Resistance vs. Junction Temperature<br>2.00<br>1.75<br>| tty yy<br>EERE<br>1.50<br>1.25 | | tt | er<br>|tert<br>1.00<br>0.75 ber |<br>| VGS= -10V<br>0.50 ID= -4.6A<br>0.25<br>tt edt<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Junction Temperature (°C)<br>, Drain Current (A)<br>-ID -I<br>, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (mΩ)  GS<br>DS(on) -V<br>R<br>(Normalized)<br>, Drain-Source On-Resistance<br>, Drain-Source On-Resistance (mΩ)<br>DS(on)<br>R<br>R<br>**----- End of picture text -----**<br>


**==> picture [227 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>25 ° C<br>25<br>t y<br>20 |<br>| |F |<br>15<br>F |<br>10<br>o 5 ° °<br>125 C -55 C<br>0<br>1 2 3 4 5<br>-VGS, Gate to Source Voltage (V)<br>Gate-Source Voltage vs. Gate Charge<br>10<br>8<br>6<br>4<br>VDS=-15V<br>2<br>ID=-4.6A<br>0<br>0 5 10 15 20 25<br>Qg, Gate Charge (nC)<br>, Drain Current (A)<br>D<br>-I<br>, Gate to Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


**==> picture [10 x 190] intentionally omitted <==**

**On-Resistance vs. Gate-Source Voltage** 

**==> picture [195 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>160<br>120<br>80<br>40 ID=-4.6A<br>0<br>4 5 6 7 8 9 10<br>-VGS, Gate to Source Voltage (V)<br>**----- End of picture text -----**<br>


3 Version: E2406 

**TSM3481CX6** 

Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Capacitance vs. Drain-Source Voltage** 

**==> picture [200 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>a ee<br>1000 aes [ee] ee ee<br>esee— ee es Ciss ee<br>100 Coss<br>ee eee<br>Crss<br>10<br>a<br>VGS =0V<br>a ee ee<br>= ——<br>f =1MHz<br>1 ——<br>0 5 10 15 20 25 30<br>-VDS, Drain to Source Voltage (V)<br>**----- End of picture text -----**<br>


## **BVDSS vs. Junction Temperature** 

**==> picture [229 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.20<br>1.15<br>1.10 Ptttttt tt<br>1.05 Pt tT tt tf | ade_|<br>1.00<br>0.95 |<br>0.90 Pt tt tT tt tt<br>0.85 Pt tt tt ID=-250µA<br>0.80 P| tf | fd<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Junction Temperature (°C)<br> (Normalized)<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


## **Maximum Safe Operating Area, Junction-to-Ambient** 

## **Source-Drain Diode Forward Current vs. Voltage** 

**==> picture [488 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100.0<br>R<br>DS(ON) 100µs<br>10<br>jt tte fs Tt | NS 1ms ll 10.0 |__|<br>1 See emer FA<br>10ms<br>FSR St H P+ ° ff fh<br>100ms 25 C<br>0.1 AheePPAR PD DC | 1.0 ———tT T st -/ fP<br>a ee<br>0.01 SINGLE PULSERӨJA=80 ° C/W ee el eeeee e ee ee ee<br>TA=25 ° C ee 150 ° C -55 ° C<br>0.001 KECre 0.1 — TT,I {tl |<br>0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>-VDS, Drain to Source Voltage (V)  -VSD, Body Diode Forward Voltage (V)<br>, Drain Current (A)<br>D<br>-I<br>, Reverse Drain Current (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Ambient** 

**==> picture [384 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.000<br>ee ee ee a H<br>eePTCoe TTT SINGLE PULSERӨJA=80 ° C/W HI1<br>1.000<br>rr emer tt ei<br>Tt<br>Duty=0.5<br>See77 a ee<br>Duty=0.2<br>0.100 ON til|ll |<br>SSS cll || Duty=0.1 | |<br>ena reea SS SSeT See Duty=0.05 L: l | | | H1!<br>a Duty=0.02 Notes:<br>Duty=0.01 Duty = t1 / t2<br>ee Single TJ = TA + PDM x ZӨJA x R Es ӨJA _| |<br>24 Se THi oy|<br>0.010<br>0.0001 0.001 0.01 0.1 1 10 100 1000 10000<br>**----- End of picture text -----**<br>


t, Square Wave Pulse Duration (sec) 

4 Version: E2406 

**TSM3481CX6** Taiwan Semiconductor 

## Ob a **TSM3481CX6** 

CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 

## **Power Dissipation** 

**==> picture [230 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>0 25 50 75 100 125 150<br>Junction-to-Ambient Temperature (°C)<br> – Power (W)<br>TOT<br>P<br>**----- End of picture text -----**<br>


## **Drain Current** 

**==> picture [196 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>4.0 VGS=-10V<br>3.0<br>2.0<br>1.0<br>0.0<br>0 25 50 75 100 125 150<br>Junction-to-Ambient Temperature (°C)<br>**----- End of picture text -----**<br>


## **Normalized gate threshold voltage vs Temperature** 

**==> picture [198 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>1.4 tt<br>1.2 |tt y ty }yy<br>ty tt<br>1.0 ree<br>0.8<br>pt tt<br>0.6 |tty| | |AT<br>ty ES<br>0.4<br>0.2 HEEEEHE ID=-250µA<br>0.0 HE<br>-75 -50 -25 0 25 50 75 100 125 150<br>=<br>TJ, Junction Temperature (°C)<br>**----- End of picture text -----**<br>


5 Version: E2406 

**TSM3481CX6** Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **SOT-26** 

**==> picture [53 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
81 YML<br>**----- End of picture text -----**<br>


- 81 = Device marking 

- Y = Year Code 

- M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) 

- L = Lot Code 

6 Version: E2406 

**TSM3481CX6** 

Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

7 Version: E2406 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/tsm3481cx6/mosfet-p-ch-30v-5-3a-sot26/dp/1864596RL)
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